Invention Application
- Patent Title: Transistors And Arrays Of Elevationally-Extending Strings Of Memory Cells
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Application No.: US17182808Application Date: 2021-02-23
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Publication No.: US20220271142A1Publication Date: 2022-08-25
- Inventor: Ramanathan Gandhi , Augusto Benvenuti , Giovanni Maria Paolucci
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L29/51
- IPC: H01L29/51
Abstract:
A transistor comprises a channel region having a frontside and a backside. A gate is adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region. Insulating material having net negative charge is adjacent the backside of the channel region. The insulating material comprises at least one of AlxFy, HfAlxFy, AlOxNy, and HfAlxOyNz, where “x”, “y”, and “z” are each greater than zero. Other embodiments and aspects are disclosed.
Public/Granted literature
- US11538919B2 Transistors and arrays of elevationally-extending strings of memory cells Public/Granted day:2022-12-27
Information query
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