Invention Application
- Patent Title: SILICON TRANSFORMER INTEGRATED CHIP
-
Application No.: US17640991Application Date: 2020-10-07
-
Publication No.: US20220278041A1Publication Date: 2022-09-01
- Inventor: Takayuki TANGE , Yoshimitsu USHIMI
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo-shi, Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo-shi, Kyoto-fu
- International Application: PCT/US2020/054516 WO 20201007
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/12 ; H01L27/13 ; H01L49/02

Abstract:
A transformer includes a silicon substrate, a plurality of metal layers and a plurality of insulating layers laminated on the silicon substrate, a bottom winding of a metal contacting a first metal layer and a second metal layer of the plurality of metal layers, a first insulating layer on the bottom winding, a core on the first insulating layer, a second insulating layer on the core, a top winding of the metal that extends around the core and a portion of the second insulating layer, and a third insulating layer on the top winding. At least one of the top winding and the bottom winding is thicker than each of the plurality of metal layers.
Public/Granted literature
- US12148693B2 Silicon transformer integrated chip Public/Granted day:2024-11-19
Information query
IPC分类: