- 专利标题： METHODS AND SYSTEMS FOR FORMING A LAYER COMPRISING VANADIUM AND OXYGEN
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申请号： US17680903申请日： 2022-02-25
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公开(公告)号： US20220282374A1公开(公告)日： 2022-09-08
- 发明人: Giuseppe Alessio Verni , Ren-Jie Chang , Qi Xie , Charles Dezelah
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 主分类号： C23C16/455
- IPC分类号： C23C16/455
摘要：
Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.
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