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    Method of forming structures including a vanadium or indium layer
    3.
    发明授权
    Method of forming structures including a vanadium or indium layer 有权

    公开(公告)号：US11521851B2

    公开(公告)日：2022-12-06

    申请号：US17162279

    申请日：2021-01-29

    申请人： ASM IP Holding B.V.

    发明人： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

    IPC分类号： H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L27/092

    摘要： Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

    METHODS AND SYSTEMS FOR FILLING A GAP
    6.
    发明申请
    METHODS AND SYSTEMS FOR FILLING A GAP 有权

    公开(公告)号：US20230098575A1

    公开(公告)日：2023-03-30

    申请号：US17953769

    申请日：2022-09-27

    申请人： ASM IP Holding B.V.

    发明人： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

    IPC分类号： C23C16/04 ,  C23C16/08 ,  C23C16/513

    摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

    SILICON OXIDE DEPOSITION METHOD
    9.
    发明申请
    SILICON OXIDE DEPOSITION METHOD 有权

    公开(公告)号：US20220084817A1

    公开(公告)日：2022-03-17

    申请号：US17472981

    申请日：2021-09-13

    申请人： ASM IP Holding B.V.

    发明人： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

    IPC分类号： H01L21/02

    摘要： The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.