Invention Application
- Patent Title: TRANSISTOR SOURCE/DRAIN EPITAXY BLOCKER
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Application No.: US17189755Application Date: 2021-03-02
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Publication No.: US20220285491A1Publication Date: 2022-09-08
- Inventor: Ming-Huei LIN , Lunwei CHANG , Jun YUAN
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/092 ; H01L29/423 ; H01L29/786 ; H01L21/02 ; H01L21/8238 ; H01L29/66
Abstract:
A transistor cell height may be scaled down without producing undesirable degradation with the use of an isolation structure between adjacent fins of a transistor cell. The transistor cell includes a substrate, a first fin and a second fin located on the substrate, and an isolation structure located on the substrate between the first fin and the second fin.
Information query
IPC分类:
