An approach to form a semiconductor structure with a multiple layer phase change material stack and four electrodes that functions as an integrated switch device. The semiconductor structure includes a sidewall spacer that is on two opposing sides of the multiple layer phase change material stack contacting an edge of each layer of the multiple layer phase change material stack. The semiconductor structure includes a pair of a first type of electrode, where each of the pair of the first type of electrode abuts each of the sidewall spacers on the two opposing sides of the multiple layer phase change material stack. A pair of a second type of electrode, where each of the second type of electrode abuts each of two other opposing sides of the multiple layer phase change material stack and contacts a heater material on outside portions of the multiple layer phase change material stack.