Invention Application
- Patent Title: MEMORY ACCESS MODULE FOR PERFORMING A PLURALITY OF SENSING OPERATIONS TO GENERATE DIGITAL VALUES OF A STORAGE CELL IN ORDER TO PERFORM DECODING OF THE STORAGE CELL
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Application No.: US17832680Application Date: 2022-06-05
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Publication No.: US20220301620A1Publication Date: 2022-09-22
- Inventor: Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Hsinchu County
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/26 ; G06F3/06 ; G11C16/08
Abstract:
A method for performing memory access of a Flash cell of a Flash memory includes: performing a plurality of sensing operations respectively corresponding to a plurality of sensing voltages to generate a first digital value and a second digital value of the Flash cell, the second digital value representing at least one candidate threshold voltage of the Flash cell; determining a threshold voltage of the Flash cell according to whether the at least one candidate threshold voltage is high or low; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
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