A semiconductor memory device includes memory block regions arranged in a first direction, a hook-up region arranged in the first direction with respect to memory block regions, and a wiring region extending in the first direction and arranged with memory block regions and the hook-up region in a second direction. Each of memory block regions includes memory strings extending in the first direction and arranged in the second direction and a first wiring extending in the second direction and connected to memory strings in common. The wiring region includes a second wiring extending in the first direction and connected to first wirings corresponding to memory block regions in common. The hook-up region includes a third wiring connected to the second wiring and a contact electrode extending in a third direction and connected to the third wiring.