发明申请
- 专利标题： SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE
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申请号： US17851244申请日： 2022-06-28
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公开(公告)号： US20220328303A1公开(公告)日： 2022-10-13
- 发明人: Hyun-Suk Lee , Jungoo Kang , Gihee Cho , Sanghyuck Ahn
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2019-0106808 20190829
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/302 ; H01L21/12 ; H01L21/768
摘要：
Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.
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