- 专利标题： METHODS FOR FORMING MULTILAYER HORIZONTAL NOR-TYPE THIN-FILM MEMORY STRINGS
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申请号： US17809535申请日： 2022-06-28
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公开(公告)号： US20220328518A1公开(公告)日： 2022-10-13
- 发明人: Scott Brad Herner , Wu-Yi Henry Chien , Jie Zhou , Eli Harari
- 申请人： SUNRISE MEMORY CORPORATION
- 申请人地址： US CA San Jose
- 专利权人： SUNRISE MEMORY CORPORATION
- 当前专利权人： SUNRISE MEMORY CORPORATION
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L29/66 ; H01L21/308
摘要：
Various methods overcome the limitations and achieve superior scaling by (i) replacing a single highly challenging high aspect ratio etch step with two or more etch steps of less challenging aspect ratios and which involve wider and more mechanically stable active strips, (ii) using dielectric pillars for support and to maintain structural stability during a high aspect ratio etch step and subsequent processing steps, or (iii) using multiple masking steps to provide two or more etch steps of less challenging aspect ratios and which involve wider and more mechanically stable active strips.
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