Invention Application
- Patent Title: Forming Liners to Facilitate The Formation of Copper-Containing Vias in Advanced Technology Nodes
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Application No.: US17466425Application Date: 2021-09-03
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Publication No.: US20220336367A1Publication Date: 2022-10-20
- Inventor: Chen-Hung Tsai , Chao-Hsun Wang , Pei-Hsuan Lee , Chih-Chien Chi , Ting-Kui Chang , Fu-Kai Yang , Mei-Yun Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L29/417 ; H01L21/768
Abstract:
A semiconductor device includes a source/drain component of a transistor. A source/drain contact is disposed over the source/drain component. A source/drain via is disposed over the source/drain contact. The source/drain via contains copper. A first liner at least partially surrounds the source/drain via. A second liner at least partially surrounds the first liner. The first liner and the second liner are disposed between the source/drain contact and the source/drain via. The first liner and the second liner have different material compositions.
Information query
IPC分类:
