The present disclosure generally relates to dynamic random access memory (DRAM) devices and to semiconductor fabrication for DRAM devices. Certain embodiments disclosed herein provide an integrated processing system and methods for forming CMOS contact, DRAM array bit line contact (BLC), and storage node structures. The integrated processing system and methods enable deposition of contact and storage node layers with reduced contamination and improved quality, thus reducing leakage current and resistance for the final contact and storage node structures.