An optoelectronic semiconductor chip may include a semiconductor body having an upper side and flanks running transversely to the upper side which delimit the semiconductor body in a lateral direction. The flanks are each covered with a first passivation layer. In the region of the flanks in each case a second passivation layer may be arranged between the first passivation layer and the semiconductor body, the index of refraction of the second passivation layer being lower than the index of refraction of the first passivation layer. The indices of refraction may be understood to be the indices of refraction for the radiation generated by the active layer during operation.