公开(公告)号：US20220336700A1

公开(公告)日：2022-10-20

申请号：US17762746

申请日：2020-09-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar TANGRING

IPC: H01L33/14 ,  H01L33/10 ,  H01L33/62

Abstract: A radiation emitting semiconductor chip may be configured to emit electromagnetic radiation from a radiation exit surface during operation. The chip may include a carrier on which a first epitaxial semiconductor layer sequence of a first conductivity type and a second epitaxial semiconductor layer sequence of a second conductivity type different from the first conductivity type are arranged, a first current spreading layer arranged between the first semiconductor layer sequence and the carrier, a second current spreading layer arranged between the first current spreading layer and the carrier, a dielectric layer arranged in regions between the first current spreading layer and the second current spreading layer, a reflective layer arranged between the second current spreading layer and the carrier, and an electrically insulating layer arranged in regions between the second current spreading layer and the reflective layer.

公开(公告)号：US20220336713A1

公开(公告)日：2022-10-20

申请号：US17636037

申请日：2020-08-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar TANGRING

IPC: H01L33/44 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip may include a semiconductor body having an upper side and flanks running transversely to the upper side which delimit the semiconductor body in a lateral direction. The flanks are each covered with a first passivation layer. In the region of the flanks in each case a second passivation layer may be arranged between the first passivation layer and the semiconductor body, the index of refraction of the second passivation layer being lower than the index of refraction of the first passivation layer. The indices of refraction may be understood to be the indices of refraction for the radiation generated by the active layer during operation.

公开(公告)号：US20190273191A1

公开(公告)日：2019-09-05

申请号：US16345287

申请日：2017-11-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar TANGRING ,  Markus RICHTER

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.