Invention Application
- Patent Title: INTERCONNECTION STRUCTURE, FABRICATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME
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Application No.: US17811649Application Date: 2022-07-11
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Publication No.: US20220344274A1Publication Date: 2022-10-27
- Inventor: Yu-Hung Lin , Chi-Wen Liu , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/535 ; H01L21/768 ; H01L21/285 ; H01L23/485 ; H01L29/417 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12 ; H01L29/78 ; H01L21/3065 ; H01L23/528
Abstract:
A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions is present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of an interconnection structure in the semiconductor device is reduced.
Public/Granted literature
- US11749603B2 Interconnection structure, fabricating method thereof, and semiconductor device using the same Public/Granted day:2023-09-05
Information query
IPC分类:
