- 专利标题: SEMICONDUCTOR MODULE
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申请号: US17861217申请日: 2022-07-10
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公开(公告)号: US20220344310A1公开(公告)日: 2022-10-27
- 发明人: Alvaro Jorge Mari Curbelo , Tobias Schuetz , Robert Roesner
- 申请人: Danfoss Silicon Power GmbH
- 申请人地址: DE Flensburg
- 专利权人: Danfoss Silicon Power GmbH
- 当前专利权人: Danfoss Silicon Power GmbH
- 当前专利权人地址: DE Flensburg
- 优先权: DE102019112935.4 20190516
- 主分类号: H01L25/07
- IPC分类号: H01L25/07 ; H01L23/538 ; H01L23/00 ; H01L23/498
摘要:
A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).