Process and device for low-temperature pressure sintering

    公开(公告)号:US11626383B2

    公开(公告)日:2023-04-11

    申请号:US17126139

    申请日:2020-12-18

    摘要: Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

    POWER MODULE
    3.
    发明申请

    公开(公告)号:US20230032893A1

    公开(公告)日:2023-02-02

    申请号:US17781407

    申请日:2020-11-13

    发明人: Jörg BERGMANN

    IPC分类号: H01L25/07 H01L25/18

    摘要: A power module (2) including a plurality of rectangular electrical power components (4, 4′) arranged on a substrate (6). The sides of at least a subset of the rectangular electrical power components (4, 4′) are not orthogonal to a line (12, 12′) that passes through the geometric centre (C) of the rectangular electrical power components (4, 4′) of the subset and extends orthogonal to a side (L, M) of the substrate (6).

    Semiconductor module
    4.
    发明授权

    公开(公告)号:US11532600B2

    公开(公告)日:2022-12-20

    申请号:US15931703

    申请日:2020-05-14

    摘要: A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).

    SEMICONDUCTOR MODULE
    5.
    发明申请

    公开(公告)号:US20220344310A1

    公开(公告)日:2022-10-27

    申请号:US17861217

    申请日:2022-07-10

    摘要: A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).

    POWER ELECTRONICS MODULE WITH IMPROVED COOLING

    公开(公告)号:US20220295662A1

    公开(公告)日:2022-09-15

    申请号:US17607959

    申请日:2020-04-30

    IPC分类号: H05K7/20

    摘要: The invention relates to a power electronics module including a flat circuit carrier (5) and an electronic assembly (10) arranged in an electrically contacting manner on the upper flat side of the circuit carrier (5) and cooling bodies (20) thermally in contact with the underside of the circuit carrier (5), wherein a heat-conducting bridge (30) arranged on the upper side of the circuit carrier (5), spanning the assembly (10) and extensively covering same, wherein the heat-conducting bridge (30) is in thermal contact with the cooling body (20) at mounting points arranged next to the assembly (10) and the space between the heat-conducting bridge (30) and the circuit carrier (5) is filled with a heat-conducting potting compound (50).

    COMPACT POWER ELECTRONICS MODULE WITH INCREASED COOLING SURFACE

    公开(公告)号:US20220293489A1

    公开(公告)日:2022-09-15

    申请号:US17607942

    申请日:2020-04-30

    IPC分类号: H01L23/473

    摘要: The invention relates to a power electronics module including a first circuit carrier (5,10, 11), as well as an electronic assembly (20, 30) arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (5, 10, 11), and a first cooling element (40) in thermal contact with the underside of the first circuit carrier (5, 10, 11), wherein the module has at least one second assembly (20, 30) arranged on the upper side of a second circuit carrier (5, 10, 11) and a second cooling element (40) arranged on the underside of the second circuit carrier (5, 10, 11), wherein the first and the second circuit carriers (5, 10, 11) are arranged with their upper sides facing one another and at least one central heat sink (60, 61, 63, 64) that is electrically insulated from the assemblies (20, 30) is arranged in the space between the assemblies (20, 30), wherein the assemblies (20, 30) and the at least one central heat sink (60, 61, 63, 64) are embedded in a heat-conducting potting compound (50), wherein the module has a number N≥3 of circuit carriers (5, 10, 11) with assemblies (20, 30) mounted on their upper sides and cooling elements (40) mounted on their undersides, and the sides having the assemblies (20, 30) and directed towards one another are arranged around the central heat sink (60, 61, 63, 64) forming a shape with an N-sided polygon as across-section.

    PRESSURE SINTERING DEVICE AND METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT

    公开(公告)号:US20220157773A1

    公开(公告)日:2022-05-19

    申请号:US17435752

    申请日:2020-02-27

    IPC分类号: H01L23/00 H05K3/32

    摘要: A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.

    Power module
    9.
    发明授权

    公开(公告)号:US10832995B2

    公开(公告)日:2020-11-10

    申请号:US16513919

    申请日:2019-07-17

    摘要: A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate(40).

    Lead frame and method of fabricating the same

    公开(公告)号:US10796985B2

    公开(公告)日:2020-10-06

    申请号:US15628794

    申请日:2017-06-21

    摘要: A lead frame is provided, including one or more power terminals and one or more control terminals, wherein at least one of the control terminals is externally terminated with a press-fit contact member, and wherein at least one of the control terminals and at least one power terminals are formed from different materials. With the disclosed lead frame of the invention, lower material cross sections in the power terminals will be provided because of the better electrical conductivity when using pure copper compared to alloys with higher mechanical strengths. Also specific/different plating could be added to the individual needs of the different pin types without using masks in the plating process.