- 专利标题： 4H-SIC MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
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申请号： US17741310申请日： 2022-05-10
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公开(公告)号： US20220344467A1公开(公告)日： 2022-10-27
- 发明人: Mario Giuseppe SAGGIO , Edoardo ZANETTI , Alfio GUARNERA
- 申请人： STMicroelectronics S.r.l.
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 优先权： IT102019000021204 20191114
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/16
摘要：
A MOSFET device includes a semiconductor body having a first and a second face. A source terminal of the MOSFET device includes a doped region which extends at the first face of the semiconductor body and a metal layer electrically coupled to the doped region. A drain terminal extends at the second face of the semiconductor body. The doped region includes a first sub-region having a first doping level and a first depth, and a second sub-region having a second doping level and a second depth. At least one among the second doping level and the second maximum depth has a value which is higher than a respective value of the first doping level and the first maximum depth. The metal layer is in electrical contact with the source terminal exclusively through the second sub-region.
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