- 专利标题： Method of Controlling Wafer Bow in a Type III-V Semiconductor Device
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申请号： US17861913申请日： 2022-07-11
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公开(公告)号： US20220344499A1公开(公告)日： 2022-10-27
- 发明人: Seong-Eun Park , Jianwei Wan , Mihir Tungare , Peter Kim , Srinivasan Kannan
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/02 ; H01L29/267
摘要：
A method includes providing a type IV semiconductor substrate having a main surface, forming a type III-V semiconductor channel region over the type IV semiconductor substrate, the type III-V semiconductor channel region comprising a two-dimensional carrier gas, forming a type III-V semiconductor lattice transition region between the type IV semiconductor substrate and the type III-V semiconductor channel region, wherein forming the type III-V semiconductor lattice transition region incudes forming a first lattice transition layer over the type IV semiconductor substrate, the first lattice transition layer having a first metallic concentration, forming a third lattice transition layer over the first lattice transition layer, the third lattice transition layer having a third metallic concentration higher than the first metallic concentration, and forming a fourth lattice transition layer over the third lattice transition layer, the fourth lattice transition layer having a fourth metallic lower than the first metallic concentration.
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