- 专利标题: MULTIPLE REFLECTOMETRY FOR MEASURING ETCH PARAMETERS
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申请号: US17242569申请日: 2021-04-28
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公开(公告)号: US20220349833A1公开(公告)日: 2022-11-03
- 发明人: Blake Erickson , Keith Berding , Michael Kutney , Soumendra Barman , Zhaozhao Zhu , Michelle SanPedro , Suresh Polali Narayana Rao
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G01N21/95
- IPC分类号: G01N21/95 ; G01N21/21 ; G01B11/06
摘要:
A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.
公开/授权文献
- US11619594B2 Multiple reflectometry for measuring etch parameters 公开/授权日:2023-04-04
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