Invention Application
- Patent Title: FERROEOLECTRIC MEMORIES
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Application No.: US17368686Application Date: 2021-07-06
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Publication No.: US20220359549A1Publication Date: 2022-11-10
- Inventor: Yu-De LIN , Po-Chun YEH , Pei-Jer TZENG
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW110116532 20210507
- Main IPC: H01L27/11507
- IPC: H01L27/11507
Abstract:
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer.
Public/Granted literature
- US11856789B2 Ferroeolectric memories with ferroelectric composite layer Public/Granted day:2023-12-26
Information query
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