公开(公告)号：US20220359549A1

公开(公告)日：2022-11-10

申请号：US17368686

申请日：2021-07-06

Applicant: Industrial Technology Research Institute

Inventor： Yu-De LIN ,  Po-Chun YEH ,  Pei-Jer TZENG

IPC: H01L27/11507

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer.

公开(公告)号：US20210242304A1

公开(公告)日：2021-08-05

申请号：US16842589

申请日：2020-04-07

Applicant: Industrial Technology Research Institute

Inventor： Yu-De LIN ,  Heng-Yuan LEE ,  Po-Chun YEH ,  Chih-Yao WANG ,  Hsin-Yun YANG

IPC: H01L49/02

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.

公开(公告)号：US20210174855A1

公开(公告)日：2021-06-10

申请号：US16907101

申请日：2020-06-19

Applicant: Industrial Technology Research Institute

Inventor： Yu-De LIN ,  Heng-Yuan LEE ,  Po-Chun YEH ,  Hsin-Yun YANG

IPC: G11C11/22

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of (110) or (220), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of (110) or (220), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of (111).