- 专利标题： SEMICONDUCTOR DEVICE WITH ENHANCED THERMAL DISSIPATION AND METHOD FOR MAKING THE SAME
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申请号： US17874274申请日： 2022-07-26
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公开(公告)号： US20220367318A1公开(公告)日： 2022-11-17
- 发明人: Yang-Che CHEN , Chen-Hua LIN , Huang-Wen TSENG , Victor Chiang LIANG , Chwen-Ming LIU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L23/00 ; H01L23/367
摘要：
A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.
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