Invention Application
- Patent Title: SEMICONDUCTOR MEMORY DEVICE
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Application No.: US17694903Application Date: 2022-03-15
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Publication No.: US20220367721A1Publication Date: 2022-11-17
- Inventor: Jae Kyeong JEONG , Min Tae RYU , Hyeon Joo SEUL , Sungwon YOO , Wonsok LEE , Min Hee CHO , Jae Seok HUR
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0062532 20210514
- Main IPC: H01L29/786
- IPC: H01L29/786

Abstract:
Provided is a semiconductor memory device comprising a bit line extending in a first direction, a channel pattern on the bit line and including a first oxide semiconductor layer in contact with the bit line and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein each of the first and second oxide semiconductor layers includes a horizontal part parallel to the bit line and first and second vertical parts that vertically protrude from the horizontal part, first and second word lines between the first and second vertical parts of the second oxide semiconductor layer and on the horizontal part of the second oxide semiconductor layer, and a gate dielectric pattern between the channel pattern and the first and second word lines. A thickness of the second oxide semiconductor layer is greater than that of the first oxide semiconductor layer.
Information query
IPC分类: