公开(公告)号：US20210104632A1

公开(公告)日：2021-04-08

申请号：US17124692

申请日：2020-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Kyeong JEONG ,  Yun Heub SONG ,  Chang Hwan CHOI ,  Hyeon Joo SEUL

IPC: H01L29/786

Abstract: The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.

公开(公告)号：US20220367721A1

公开(公告)日：2022-11-17

申请号：US17694903

申请日：2022-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Kyeong JEONG ,  Min Tae RYU ,  Hyeon Joo SEUL ,  Sungwon YOO ,  Wonsok LEE ,  Min Hee CHO ,  Jae Seok HUR

IPC: H01L29/786

Abstract: Provided is a semiconductor memory device comprising a bit line extending in a first direction, a channel pattern on the bit line and including a first oxide semiconductor layer in contact with the bit line and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein each of the first and second oxide semiconductor layers includes a horizontal part parallel to the bit line and first and second vertical parts that vertically protrude from the horizontal part, first and second word lines between the first and second vertical parts of the second oxide semiconductor layer and on the horizontal part of the second oxide semiconductor layer, and a gate dielectric pattern between the channel pattern and the first and second word lines. A thickness of the second oxide semiconductor layer is greater than that of the first oxide semiconductor layer.

公开(公告)号：US20190393353A1

公开(公告)日：2019-12-26

申请号：US16450218

申请日：2019-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Kyeong JEONG ,  Yun Heub SONG ,  Chang Hwan CHOI ,  Hyeon Joo SEUL

IPC: H01L29/786

Abstract: The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.