Invention Application
- Patent Title: MULTI-LAYER SELECTOR DEVICE AND METHOD OF FABRICATING THE SAME
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Application No.: US17623241Application Date: 2021-11-09
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Publication No.: US20220367809A1Publication Date: 2022-11-17
- Inventor: Jang Sik LEE , Kwang Hyun KIM , Young Jun PARK
- Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- Applicant Address: KR Pohang-si
- Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- Current Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- Current Assignee Address: KR Pohang-si
- Priority: KR10-2020-0151131 20201112,KR10-2020-0151132 20201112
- International Application: PCT/KR2021/016197 WO 20211109
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
The present invention provides a multi-layer selector device exhibiting a low leakage current by controlling a threshold voltage. According to an embodiment of the present invention, the multi-layer selector device comprises: a substrate; a lower electrode layer disposed on the substrate; an insulating layer disposed on the lower electrode layer and having a via hole passing through to expose the lower electrode layer; a switching layer disposed on the lower electrode layer in the via hole, performing a switching operation by forming and destroying a conductive filament, and made of a multi-layer to control the formation of the conductive filament; and an upper electrode layer disposed on the switching layer.
Public/Granted literature
- US11925129B2 Multi-layer selector device and method of fabricating the same Public/Granted day:2024-03-05
Information query
IPC分类: