Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17745953Application Date: 2022-05-17
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Publication No.: US20220376076A1Publication Date: 2022-11-24
- Inventor: Toshiki KANEKO , Fumiya KIMURA
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Priority: JP2021-084709 20210519
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/66 ; H01L29/40
Abstract:
A semiconductor device includes a substrate, an oxide semiconductor layer over the substrate, a gate insulating layer over the oxide semiconductor layer, a metal oxide layer over the gate insulating layer, and a gate electrode over the metal oxide layer. A first side surface of the metal oxide protrudes from a second side surface of the gate electrode in a plan view.
Information query
IPC分类:
