Invention Application
- Patent Title: QUANTUM-DOT LIGHT EMITTING DIODE, METHOD OF FABRICATING THE QUANTUM-DOT LIGHT EMITTING DIODE AND QUANTUM-DOT LIGHT EMITTING DISPLAY DEVICE
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Application No.: US17876447Application Date: 2022-07-28
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Publication No.: US20220376200A1Publication Date: 2022-11-24
- Inventor: Kyu-Nam KIM , Duk-Young JEON , Hyun-Jin CHO , Sun-Joong PARK
- Applicant: LG DISPLAY CO., LTD. , Korea Advanced Institute of Science and Technology
- Applicant Address: KR Seoul; KR Daejeon
- Assignee: LG DISPLAY CO., LTD.,Korea Advanced Institute of Science and Technology
- Current Assignee: LG DISPLAY CO., LTD.,Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Seoul; KR Daejeon
- Priority: KR10-2019-0074869 20190624
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/56 ; H01L51/00

Abstract:
The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.
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Information query
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