A sensing assembly comprises for detecting a property of a sample comprises a field effect transistor (FET) configured to output a first signal indicative of a property of a sample comprises: a first layer providing a sensing surface; a channel provided below the first layer; and a drain and a source in electrical communication with the channel. The sensing assembly may further comprise a gate provided below the first layer and the first layer comprises a one-dimensional or two-dimensional material. Alternatively or additionally, the first layer comprises N-polar hexagonal boron nitride (hBN).