公开(公告)号：US20240094200A1

公开(公告)日：2024-03-21

申请号：US17947007

申请日：2022-09-16

Applicant: Analog Devices, Inc.

Inventor： Alexander C. STANGE ,  Mohamed AZIZE ,  Hari CHAUHAN

IPC: G01N33/543 ,  G01N33/531

CPC classification number: G01N33/54353 ,  G01N33/531

Abstract: The present disclosure provides a method of fabricating a target capture and sensor assembly. The method comprises the steps of: providing a fluid path with a target capture surface comprising an anchor species with a first functional group disposed thereon; providing a target capture species to the target capture surface of the fluid path, wherein each target capture species comprises a target capture part and a second functional group configured to react with the first functional group; and exposing at least a portion of the target capture surface of the fluid path to photo radiation so as to cause a photo-initiated reaction between the first functional group and the second functional group, wherein the target capture and sensor assembly further comprises a sensing surface in the fluid path and wherein the target capture surface and the sensing surface are in fluid communication with one another.

公开(公告)号：US20240094154A1

公开(公告)日：2024-03-21

申请号：US18189717

申请日：2023-03-24

Applicant: Analog Devices, Inc.

Inventor： Alexander C. STANGE ,  Mohamed AZIZE ,  Hari CHAUHAN

IPC: G01N27/12 ,  B01L3/00

CPC classification number: G01N27/125 ,  B01L3/502707 ,  B01L3/502715

Abstract: The present disclosure provides a method of fabricating a sensor assembly in which a sensor surface has an anchor species provided thereon, the anchor species having a first functional group attached. The method further comprises disposing a fluid channel over the surface and subsequently providing an analyte capture species to the fluid channel. The analyte capture species comprises a second functional group configured to react with the first functional group. The surface is then exposed to photo radiation and the first and second functional groups react forming a link between the analyte capture species and the anchor species on the sensing surface.

公开(公告)号：US20250085254A1

公开(公告)日：2025-03-13

申请号：US18717282

申请日：2022-12-06

Applicant: Analog Devices, Inc.

Inventor： Hari CHAUHAN ,  Alexander C. STANGE ,  Mohamed AZIZE

IPC: G01N27/414 ,  G01N27/12 ,  G01N27/327

Abstract: The present disclosure provides a sensor assembly for detecting the presence of at least one amplification product of an isothermal amplification process (i.e., an isothermal nucleic acid amplification process). The sensor assembly includes a first sensor responsive to the detection of an indicator of the presence of at least one amplification product to provide a first signal, the first sensor comprising a sensing surface arranged to contact a sample in the amplification product receiving region, the sensing surface comprises a first layer comprising a one-dimensional or two-dimensional material. Alternatively or additionally, the disclosure provides a pH sensor comprising a sensing surface comprising a first layer comprising a one-dimensional or two-dimensional material.

公开(公告)号：US20220381728A1

公开(公告)日：2022-12-01

申请号：US17827555

申请日：2022-05-27

Applicant: Analog Devices, Inc.

Inventor： Mohamed AZIZE

IPC: G01N27/414

Abstract: A sensing assembly comprises for detecting a property of a sample comprises a field effect transistor (FET) configured to output a first signal indicative of a property of a sample comprises: a first layer providing a sensing surface; a channel provided below the first layer; and a drain and a source in electrical communication with the channel. The sensing assembly may further comprise a gate provided below the first layer and the first layer comprises a one-dimensional or two-dimensional material. Alternatively or additionally, the first layer comprises N-polar hexagonal boron nitride (hBN).

公开(公告)号：US20220381720A1

公开(公告)日：2022-12-01

申请号：US17827594

申请日：2022-05-27

Applicant: Analog Devices, Inc.

Inventor： Mohamed AZIZE

IPC: G01N27/30 ,  G01N27/414

Abstract: The present disclosure provides a reference electrode for providing a reference potential during measurement of a property of a sample. The reference electrode comprising: a reference electrode layer; and a reference layer provided over at least a part of the reference electrode layer and defining a sample receiving region which is separated from the reference electrode layer by the reference layer. In one embodiment, the reference layer comprises fluorinated or silanized graphene and/or fluorinated or silanized graphene oxide. Alternatively, the graphene or graphene oxide are functionalised or doped so as to form a super-hydrophobic reference layer.

公开(公告)号：US20240328994A1

公开(公告)日：2024-10-03

申请号：US18741376

申请日：2024-06-12

Applicant: Analog Devices, Inc.

Inventor： Mohamed AZIZE ,  Shekhar Bakshi

IPC: G01N27/414 ,  G01N27/30 ,  H01L29/16 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: G01N27/4145 ,  G01N27/301 ,  G01N27/414 ,  H01L29/42316 ,  H01L29/66045 ,  H01L29/66075 ,  H01L29/1606 ,  H01L29/4908

Abstract: Provided are methods of manufacturing comprising providing a FET base structure, the FET base structure comprising a substrate, a drain and a source; and providing a channel layer on the FET base structure; and providing a first layer on the FET base structure. The first layer comprises a one-dimensional or two-dimensional material and is arranged on an upper surface of the channel layer so as to form a sensing surface of the FET. The step of providing the channel layer comprises forming the channel layer and subsequently transferring the channel layer onto the FET base structure. Alternatively or additionally, the step of providing the first layer on the FET base structure comprises forming the first layer and subsequently transferring the first layer onto the FET base structure.

公开(公告)号：US20220384604A1

公开(公告)日：2022-12-01

申请号：US17827619

申请日：2022-05-27

Applicant: Analog Devices, Inc.

Inventor： Mohamed AZIZE ,  Shekhar BAKSHI

IPC: H01L29/66 ,  H01L29/423

Abstract: Provided are methods of manufacturing comprising providing a FET base structure, the FET base structure comprising a substrate, a drain and a source; and providing a channel layer on the FET base structure; and providing a first layer on the FET base structure. The first layer comprises a one-dimensional or two-dimensional material and is arranged on an upper surface of the channel layer so as to form a sensing surface of the FET. The step of providing the channel layer comprises forming the channel layer and subsequently transferring the channel layer onto the FET base structure. Alternatively or additionally, the step of providing the first layer on the FET base structure comprises forming the first layer and subsequently transferring the first layer onto the FET base structure.