Invention Application
- Patent Title: VOID-FREE CONTACT TRENCH FILL IN GATE-ALL-AROUND FET ARCHTECTURE
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Application No.: US17728871Application Date: 2022-04-25
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Publication No.: US20220384258A1Publication Date: 2022-12-01
- Inventor: Nicolas Louis BREIL , Byeong Chan LEE , Benjamin COLOMBEAU
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/40 ; H01L29/66 ; H01L21/285 ; H01L29/417 ; H01L23/522
Abstract:
A method of forming a contact trench structure in a semiconductor device, the method includes performing a first selective deposition process to form a contact on sidewalls of a trench, each of the sidewalls of the trench comprising a first cross section of a first material and a second cross section of a second material, performing a second selective deposition process to form a metal silicide layer on the contact, performing a first metal fill process to form a contact plug within the trench, the first metal fill process including depositing a contact plug metal material within the trench, performing an etch process to form an opening within the trench, comprising partially etching the contact plug metal material within the trench, and performing a second metal fill process, the second metal fill process comprising depositing the contact plug metal material within the opening.
Information query
IPC分类:
