Invention Application
- Patent Title: INTEGRATED CIRCUIT DEVICE
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Application No.: US17649562Application Date: 2022-02-01
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Publication No.: US20220384467A1Publication Date: 2022-12-01
- Inventor: Junhyoung Kim , Byunggon Park , Seungmin Lee , Kangmin Kim , Taemin Eom , Byungkwan You
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR10-2021-0067893 20210526
- Main IPC: H01L27/11526
- IPC: H01L27/11526 ; H01L27/11519 ; H01L23/522 ; H01L23/528 ; H01L27/11524 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L27/11582

Abstract:
An integrated circuit device includes a substrate, a peripheral wiring circuit that includes a bypass via and is disposed on the substrate, a peripheral circuit that includes an interlayer insulating layer surrounding at least a portion of the peripheral wiring circuit, and a memory cell array disposed on and overlapping the peripheral circuit. The memory cell array includes a base substrate, a plurality of gate lines disposed on the base substrate, and a plurality of channels penetrating the plurality of gate lines. The integrated circuit device further includes a barrier layer interposed between the peripheral circuit and the memory cell array. The barrier layer includes a bypass hole penetrating from a top surface to a lower surface of the barrier layer. The bypass via is disposed in the bypass hole.
Public/Granted literature
- US12185534B2 Integrated circuit device Public/Granted day:2024-12-31
Information query
IPC分类: