Invention Application
- Patent Title: PHOTODETECTOR AND IMAGE SENSOR INCLUDING THE SAME
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Application No.: US17668566Application Date: 2022-02-10
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Publication No.: US20220384500A1Publication Date: 2022-12-01
- Inventor: Sungjun KIM , Jin-Hong PARK , Sunghun LEE , Keun HEO
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0067460 20210526
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.
Public/Granted literature
- US12230651B2 Photodetector and image sensor including the same Public/Granted day:2025-02-18
Information query
IPC分类: