Invention Application
- Patent Title: VERTICALLY-STACKED INTERDIGITATED METAL-INSULATOR-METAL CAPACITOR FOR SUB-20 NM PITCH
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Application No.: US17303390Application Date: 2021-05-27
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Publication No.: US20220384564A1Publication Date: 2022-12-01
- Inventor: Hsueh-Chung Chen , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01G4/005 ; H01G4/10

Abstract:
An interdigitated metal-insulator-metal capacitor structure is formed by a first unitary body of a first conductive material that includes a first metal plate, a first set of interdigitated electrodes protruding upwards from a top surface of the first metal plate, and a first set of connecting vias protruding downwards from a bottom surface of the first metal plate. A second unitary body of a second conductive material is disposed above the first unitary body and electrically separated from the first unitary body by an insulating layer. The second unitary body includes a second metal plate, a second set of interdigitated electrodes protruding downwards from a bottom surface of the second metal plate, and a second set of connecting vias protruding upwards from a top surface of the second metal plate. The first set of interdigitated electrodes are interleaved with the second set of interdigitated electrodes.
Public/Granted literature
- US11715594B2 Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch Public/Granted day:2023-08-01
Information query
IPC分类: