Invention Application
- Patent Title: RADIO FREQUENCY AMPLIFIER AND BIAS CIRCUIT
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Application No.: US17474055Application Date: 2021-09-14
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Publication No.: US20220385245A1Publication Date: 2022-12-01
- Inventor: Shun-Nan Tai , Yao Hui Chiang
- Applicant: RichWave Technology Corp.
- Applicant Address: TW Taipei
- Assignee: RichWave Technology Corp.
- Current Assignee: RichWave Technology Corp.
- Current Assignee Address: TW Taipei
- Priority: TW110118870 20210525
- Main IPC: H03F3/19
- IPC: H03F3/19 ; H03F1/56

Abstract:
A radio frequency (RF) amplifier and a bias circuit are provided. The RF amplifier includes an amplifier, a first inductive-capacitive resonance circuit, and a first bias circuit. The amplifier includes an input terminal configured to receive an incoming RF signal through a first RF path. The first inductive-capacitive resonance circuit includes a first terminal coupled to a first reference voltage. A second terminal of the first inductive-capacitive resonance circuit is coupled to the first RF path. In response to the first reference voltage being at a first reference level, the RF amplifier is enabled; in response to the first reference voltage being at a second reference level, the RF amplifier is disabled. The first bias circuit includes a first terminal configured to be coupled to the first reference voltage and a second terminal coupled to the input terminal of the amplifier to provide a first direct current (DC) component.
Public/Granted literature
- US12224720B2 Radio frequency amplifier and bias circuit Public/Granted day:2025-02-11
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