公开(公告)号：US12224720B2

公开(公告)日：2025-02-11

申请号：US17474055

申请日：2021-09-14

Applicant: RichWave Technology Corp.

Inventor： Shun-Nan Tai ,  Yao Hui Chiang

IPC: H03F3/19 ,  H03F1/56

Abstract: A radio frequency (RF) amplifier and a bias circuit are provided. The RF amplifier includes an amplifier, a first inductive-capacitive resonance circuit, and a first bias circuit. The amplifier includes an input terminal configured to receive an incoming RF signal through a first RF path. The first inductive-capacitive resonance circuit includes a first terminal coupled to a first reference voltage. A second terminal of the first inductive-capacitive resonance circuit is coupled to the first RF path. In response to the first reference voltage being at a first reference level, the RF amplifier is enabled; in response to the first reference voltage being at a second reference level, the RF amplifier is disabled. The first bias circuit includes a first terminal configured to be coupled to the first reference voltage and a second terminal coupled to the input terminal of the amplifier to provide a first direct current (DC) component.

公开(公告)号：US20250150042A1

公开(公告)日：2025-05-08

申请号：US19014270

申请日：2025-01-09

Applicant: RichWave Technology Corp.

Inventor： Shun-Nan Tai ,  Yao Hui Chiang

IPC: H03F3/19 ,  H03F1/56

Abstract: A bias circuit is provided. The bias circuit includes a first resistor, a first transistor, a second transistor, and a third transistor. A first terminal of the first resistor is coupled to a system voltage. A first terminal of the first transistor is coupled to a second terminal of the first resistor. A second terminal of the first transistor is coupled to an output terminal of the bias circuit. A first terminal of the second transistor is coupled to the system voltage. A control terminal of the second transistor is coupled to a second terminal of the first resistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor. A second terminal of the third transistor is coupled to a first reference voltage. A control terminal of the third transistor is coupled to a second terminal of the second transistor.

公开(公告)号：US20220385245A1

公开(公告)日：2022-12-01

申请号：US17474055

申请日：2021-09-14

Applicant: RichWave Technology Corp.

Inventor： Shun-Nan Tai ,  Yao Hui Chiang

IPC: H03F3/19 ,  H03F1/56

Abstract: A radio frequency (RF) amplifier and a bias circuit are provided. The RF amplifier includes an amplifier, a first inductive-capacitive resonance circuit, and a first bias circuit. The amplifier includes an input terminal configured to receive an incoming RF signal through a first RF path. The first inductive-capacitive resonance circuit includes a first terminal coupled to a first reference voltage. A second terminal of the first inductive-capacitive resonance circuit is coupled to the first RF path. In response to the first reference voltage being at a first reference level, the RF amplifier is enabled; in response to the first reference voltage being at a second reference level, the RF amplifier is disabled. The first bias circuit includes a first terminal configured to be coupled to the first reference voltage and a second terminal coupled to the input terminal of the amplifier to provide a first direct current (DC) component.