- 专利标题： SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
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申请号： US17756094申请日： 2020-11-12
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公开(公告)号： US20220403515A1公开(公告)日： 2022-12-22
- 发明人: Munehito KAGAYA
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2019-209033 20191119
- 国际申请： PCT/JP2020/042215 WO 20201112
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/44 ; C23C16/34 ; C23C16/52 ; C23C16/505 ; H01L21/02 ; H01J37/32
摘要：
A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.
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