Invention Application
- Patent Title: METHODS FOR VFET CELL PLACEMENT AND CELL ARCHITECTURE
-
Application No.: US17941264Application Date: 2022-09-09
-
Publication No.: US20230004705A1Publication Date: 2023-01-05
- Inventor: Jung Ho DO , Seung Hyun SONG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Main IPC: G06F30/392
- IPC: G06F30/392 ; H01L27/02 ; H01L23/528 ; H01L29/78 ; H01L27/092 ; H01L27/11524 ; H01L27/11565 ; H01L27/1157 ; H01L27/11582 ; H01L29/08 ; H01L29/417 ; H01L29/66 ; H01L27/11556

Abstract:
A cell architecture and a method for placing a plurality of cells to form the cell architecture are provided. The cell architecture includes at least a 1st cell and a 2nd cell placed next to each other in a cell width direction, wherein the 1st cell includes a one-fin connector which is formed around a fin among a plurality of fins of the 1st cell, and connects a vertical field-effect transistor (VFET) of the 1st cell to a power rail of the 1st cell, wherein a 2nd cell includes a connector connected to a power rail of the 2nd cell, wherein the fin of the 1st cell and the connector of the 2nd cell are placed next to each other in the cell width direction in the cell architecture, and wherein the one-fin connector of the 1st cell and the connector of the 2nd cell are merged.
Information query