Invention Application
- Patent Title: INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
-
Application No.: US17900955Application Date: 2022-09-01
-
Publication No.: US20230006064A1Publication Date: 2023-01-05
- Inventor: Kenichi OKAZAKI , Toshinari SASAKI , Shuhei YOKOYAMA , Takashi HAMOCHI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2012-087432 20120406,JP2012-156492 20120712
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L29/24 ; H01L29/49 ; H01L21/385 ; H01L23/31 ; H01L29/04 ; H01L29/45
Abstract:
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.
Information query
IPC分类:
