- 专利标题： PARTIAL TUNNELING OXIDE LAYER PASSIVATION CONTACT STRUCTURE OF PHOTOVOLTAIC CELL AND PHOTOVOLTAIC MODULE
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申请号： US17778423申请日： 2019-12-30
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公开(公告)号： US20230006086A1公开(公告)日： 2023-01-05
- 发明人: Jie YANG , Haijie SUN , Zhao WANG , Menglei XU , Peiting ZHENG , Xinyu ZHANG , Hao JIN
- 申请人： ZHEJIANG JINKO SOLAR CO., LTD. , JINKO SOLAR CO., LTD.
- 申请人地址： CN Haining, Zhejiang; CN Shangrao, Jiangxi
- 专利权人： ZHEJIANG JINKO SOLAR CO., LTD.,JINKO SOLAR CO., LTD.
- 当前专利权人： ZHEJIANG JINKO SOLAR CO., LTD.,JINKO SOLAR CO., LTD.
- 当前专利权人地址： CN Haining, Zhejiang; CN Shangrao, Jiangxi
- 优先权： CN201911142103.0 20191120,CN201922019213.X 20191120
- 国际申请： PCT/CN2019/129771 WO 20191230
- 主分类号： H01L31/068
- IPC分类号： H01L31/068 ; H01L31/02
摘要：
A structure of partial tunnel oxide passivated contact for a photovoltaic cell and a photovoltaic module. The structure comprises: a first tunnel oxide layer disposed on a surface of a cell body, and a first polysilicon film disposed on a surface of the tunnel oxide layer. The surface of the cell body has a region for passivated contact and a region for light absorption, the first tunnel oxide layer is disposed in the region for passivated contact, and a projection of the first polysilicon film on the surface of the cell body is located in the region for passivated contact.
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