Invention Application
- Patent Title: LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US17941148Application Date: 2022-09-09
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Publication No.: US20230006164A1Publication Date: 2023-01-05
- Inventor: Shingo EGUCHI , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2009-215053 20090916
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L27/12 ; H01L27/32 ; H01L51/00

Abstract:
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
Public/Granted literature
- US11997859B2 Light-emitting device and manufacturing method thereof Public/Granted day:2024-05-28
Information query
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