An accelerated test for applying a high voltage is performed without reducing a manufacturing yield of a semiconductor device using a wide gap semiconductor material. The technical idea in the embodiment is, for example, an idea of performing the accelerated test in the state of a semiconductor wafer to distinguish a latent defect as illustrated in FIG. 4. That is, the technical idea in the embodiment is to perform the accelerated test on a semiconductor chip containing a wide bandgap semiconductor material as a main component not in the state of a semiconductor chip but in the state of the semiconductor wafer.