Invention Publication
- Patent Title: Ultra-Low Power Readout Circuit With High-Voltage Bias Generation For MEMS Accelerometer
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Application No.: US17983463Application Date: 2022-11-09
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Publication No.: US20230146711A1Publication Date: 2023-05-11
- Inventor: Yimai PENG , David BLAAUW , Dennis SYLVESTER , David Kyojin CHOO
- Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Applicant Address: US MI Ann Arbor
- Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee Address: US MI Ann Arbor
- Main IPC: G01P15/125
- IPC: G01P15/125 ; H02M3/07

Abstract:
A motion sensing system uses high-voltage biasing to achieve high resolution with ultra-low power. The motion sensing system consists of a motion sensor, a readout circuit, and a high-voltage bias circuit to generate the optimized bias voltage for the motion sensor. By using the high-voltage bias, the signal from the motion sensor is raised above the readout circuit's noise floor, eliminating the power-hungry amplifier and signal-chopping used in conventional motion sensing systems. The bias circuit, while producing the programmable bias voltages for the motion sensor, also compensates for the process mismatch raised by the high voltage biases.
Information query
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