Invention Publication
- Patent Title: MEMORY DEVICE FOR COLUMN REPAIR
-
Application No.: US18149302Application Date: 2023-01-03
-
Publication No.: US20230154559A1Publication Date: 2023-05-18
- Inventor: Jooyong PARK , Minsu Kim , Daeseok Byeon , Pansuk Kwak
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20200127541 2020.09.29
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C16/04 ; G11C29/44 ; G06F11/20

Abstract:
A memory device includes a memory cell array including normal memory cells and redundant memory cells; first page buffers connected to the normal memory cells through first bit lines including a first bit line group and a second bit line group and arranged in a first area corresponding to the first bit lines in a line in a first direction; and second page buffers connected to the redundant memory cells through second bit lines including a third bit line group and a fourth bit line group and arranged in a second area corresponding to the second bit lines in a line in the first direction, wherein, when at least one normal memory cell connected to the first bit line group is determined as a defective cell, normal memory cells connected to the first bit line group are replaced with redundant memory cells connected to the third bit line group.
Public/Granted literature
- US11901033B2 Memory device for column repair Public/Granted day:2024-02-13
Information query