Invention Publication
- Patent Title: BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL
-
Application No.: US17528858Application Date: 2021-11-17
-
Publication No.: US20230154784A1Publication Date: 2023-05-18
- Inventor: Ruilong Xie , Julien Frougier , Takeshi Nogami , Roy R. Yu , Balasubramanian S. Pranatharthi Haran
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L21/8234 ; H01L21/768 ; H01L23/528 ; H01L23/535 ; H01L27/088
Abstract:
A semiconductor device is provided. The semiconductor device includes a protective liner, and a buried power rail on a first portion of the protective liner, wherein the protective liner is on opposite sides of the buried power rail. The semiconductor device further includes a source/drain on a second portion of the protective liner, wherein the source/drain is offset from the buried power rail, and a source/drain contact on the source/drain and in electrical communication with the buried power rail.
Information query
IPC分类:
