Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US17548607Application Date: 2021-12-13
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Publication No.: US20230157029A1Publication Date: 2023-05-18
- Inventor: Po-Kuang Hsieh , Shih-Hung Tsai , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN 2111338520.X 2021.11.12
- Main IPC: H01L27/11507
- IPC: H01L27/11507
Abstract:
A method for fabricating a semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer on a substrate, forming a first trench and a second trench in the first IMD layer, forming a bottom electrode in the first trench and the second trench, forming a ferroelectric (FE) layer on the bottom electrode, and then forming a top electrode on the FE layer to form a ferroelectric random access memory (FeRAM).
Public/Granted literature
- US12114508B2 Semiconductor device and method for fabricating the same Public/Granted day:2024-10-08
Information query
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