- 专利标题: REDUCED IMPEDANCE SUBSTRATE
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申请号: US17375676申请日: 2021-07-14
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公开(公告)号: US20230018448A1公开(公告)日: 2023-01-19
- 发明人: Aniket PATIL , Joan Rey Villarba BUOT , Hong Bok WE
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L25/065 ; H01L23/532 ; H01L23/528 ; H01L21/768 ; H01L27/108
摘要:
Disclosed are apparatus comprising a substrate and techniques for fabricating the same. The substrate may include a first metal layer having signal interconnects on a first side of the substrate. A second metal layer may include ground plane portions on a second side of the substrate. Conductive channels may be formed in the substrate and coupled to the ground plane portions. The conductive channels are configured to extend the ground plane portions towards the signal interconnects to reduce a distance from individual signal interconnects to individual conductive channels. The distance may be in a range of seventy-five percent to fifty percent of a substrate thickness between the first metal layer and the second metal layer.
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