- 专利标题： DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS
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申请号： US17547669申请日： 2021-12-10
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公开(公告)号： US20230187342A1公开(公告)日： 2023-06-15
- 发明人: Nicholas Anthony Lanzillo , PRASAD BHOSALE , Alexander Edward Hess , SON NGUYEN , Rudy J. Wojtecki
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768 ; H01L21/3105
摘要：
A method of forming a fully-aligned via (FAV) structure is provided. The method includes arranging conductive material adjacent to a dielectric pad and chemically deactivating a surface of the conductive material by forming a dopant-free surface-aligned monolayer (SAM) thereon. Dielectric material is deposited onto the dielectric pad aside the dopant-free SAM and the dopant-free SAM is removed from the surface of the conductive material.
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