Invention Publication
- Patent Title: HIGH VOLTAGE CMOS DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US18052062Application Date: 2022-11-02
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Publication No.: US20230197730A1Publication Date: 2023-06-22
- Inventor: Wu-Te Weng , Chih-Wen Hsiung , Ta-Yung Yang
- Applicant: Richtek Technology Corporation
- Applicant Address: TW Zhubei City
- Assignee: Richtek Technology Corporation
- Current Assignee: Richtek Technology Corporation
- Current Assignee Address: TW Zhubei City
- Priority: TW 1114904 2022.04.19
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/78 ; H01L21/8238 ; H01L29/66

Abstract:
A high voltage complementary metal oxide semiconductor (CMOS) device includes: a semiconductor layer, plural insulation regions, a first N-type high voltage well and a second N-type high voltage well, which are formed by one same ion implantation process, a first P-type high voltage well and a second P-type high voltage well, which are formed by one same ion implantation process, a first drift oxide region and a second oxide region, which are formed by one same etching process by etching a drift oxide layer; a first gate and a second gate, which are formed by one same etching process by etching a polysilicon layer, an N-type source and an N-type drain, and a P-type source and a P-type drain.
Public/Granted literature
- US3149637A Gas dishwasher control circuit Public/Granted day:1964-09-22
Information query
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