Invention Publication
- Patent Title: CAPACITOR AND INDUCTOR EMBEDDED STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND SUBSTRATE
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Application No.: US17998159Application Date: 2020-07-24
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Publication No.: US20230197739A1Publication Date: 2023-06-22
- Inventor: Xianming CHEN , Lei FENG , Weiyuan YANG , Benxia HUANG , Yejie HONG
- Applicant: Zhuhai ACCESS Semiconductor Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: Zhuhai ACCESS Semiconductor Co., Ltd.
- Current Assignee: Zhuhai ACCESS Semiconductor Co., Ltd.
- Current Assignee Address: CN Guangdong
- Priority: CN 2010553554.X 2020.06.17
- International Application: PCT/CN2020/104570 2020.07.24
- Date entered country: 2022-11-08
- Main IPC: H01L27/13
- IPC: H01L27/13

Abstract:
A capacitor and inductor embedded structure and a manufacturing method therefor, and a substrate are disclosed. The method includes: providing a metal plate; sequentially depositing and etching a first protective layer, a thin film dielectric layer, a second protective layer, and an upper electrode layer on an upper surface of the metal plate to form a thin film capacitor and a capacitor upper electrode; pressing an upper dielectric layer to the upper surface of the metal plate, covering the thin film capacitor and the capacitor upper electrode, and etching the metal plate to form a capacitor lower electrode; pressing a lower dielectric layer to a lower surface of the metal plate, and performing drilling on the upper dielectric layer and the lower dielectric layer to form inductor through holes and capacitor electrode through holes; electroplating metal to form an inductor and circuit layers.
Information query
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